●学生の受賞
Afishah ALIAS (D2)，“Mol Concentration Dependence of ZnO TFTs Fabricate by CVD Method using ZnAc2 Solution” 室蘭工業大学平成21年度佐藤矩康博士記念国際活動奨学賞 受賞，2010年1月．
木村慎治 (B4)，「有機金属分子線エピタキシー法を用いた自己組織化InAs/GaAsSbドット成長過程の評価」，室蘭工業大学平成25年度後期佐藤矩康博士記念国際活動奨学賞 受賞，2014年2月5日．
Yuhei Suzuki (M2), “Effect of nitrogen-radical irradiation for selective growth of InAs on GaAsSb/GaAs submicron dot structures”, IUMRS International Conference on Electronic Materials 2014 (IUMRS-ICEM2014), Best Poster Award, June 13 2014. (共同研究者：Shinji Kimura, Kohei Miyazawa, Katsuhiro Uesugi)
下村優樹 (M1)，「表面マイグレーション制御によるGaP(001)上GaAsNSe混晶のヘテロ成長技術の開発」，室蘭工業大学平成26年度後期佐藤矩康博士記念国際活動奨学賞 受賞，2015年1月29日．
五十嵐洋輔 (M1), 「有機金属分子線エピタキシー法を用いたGaAsN/Si(110)の低温成長技術の開発」，室蘭工業大学平成26年度後期佐藤矩康博士記念国際活動奨学賞 受賞，2015年1月29日．
アリス ジアナ ビンティ ジャッバ (M1)，「Annealing temperature dependence on controlling the crystal structure of CuGaO2 films」，室蘭工業大学平成27年度後期佐藤矩康博士記念国際活動奨学賞 受賞，2016年2月26日．
金谷優輝 (B4)，「ゾル-ゲル法によるスピネル型CuGa2O4薄膜の作製」，平成29年度日本表面科学会東北・北海道支部学術講演会 学生講演賞 受賞，平成30年3月9日．(共同研究者：遠藤琢真，池杉海航，植杉克弘)
松本可菜美 (M1)，「Fabrication of High-Aspect-Ratio Cu2O Wire Structures on Surface Through Sol-Gel Process」，室蘭工業大学平成30年度後期佐藤矩康博士記念国際活動奨学賞 受賞，2019年1月15日．
●学会活動
【2024年度】
植杉克弘，四戸快人，熊谷直哉，米田貴裕，伴野健成，Yuxiao Pang，“銅酸化物ナノドット薄膜の光学的特性のアニール温度依存性”， 日本ゾル-ゲル学会第22回討論会，2024年7月25日～26日，東広島芸術文化ホールくらら(広島).
Katsuhiro Uesugi, Kaito Shinohe, Naoya Kumagai, and Yuxiao Pang, “Optical bandgap narrowing in sol-gel derived Cu2O nanodot film for solar cell applications”, International Sol-Gel Conference SOLGEL 2024, September 1-6, Berlin, Germany.
【2023年度】
熊谷直哉, 植杉克弘“ナローバンドギャップCu2Oナノドット薄膜の作製” ，日本ゾル-ゲル学会第21回討論会，2023年7月13日－14日，穂の国とよはし芸術劇場PLAT(豊橋)．
Katsuhiro UESUGI, Naoya KUMAGAI, Ryuya MOMIYAMA, Keita SUZUKI, Yuto IKEDA, and Yuxiao PANG, " Growth of Nanosheet Structures on Gallium Oxide Hydroxide Gel Surfaces", IUMRS-International Conference on Advanced Materials & 11th International Conference on Materials for Advanced Technologies, June 26-30, 2023, Suntec Singapore.
Katsuhiro UESUGI, Naoya KUMAGAI, Shinsuke SUZUKI, and Yuxiao PANG, " Effects of Annealing on Sol-gel Derived Cu2O Films", IUMRS-International Conference on Advanced Materials & 11th International Conference on Materials for Advanced Technologies, June 26-30, 2023, Suntec Singapore.
Katsuhiro UESUGI, Keita SUZUKI, Naoya KUMAGAI, and Yuxiao PANG, "Growth temperature dependence of nanosheet structures on oriented GaOOH gel film surfaces", Annual Meeting of the Japan Society of Vacuum and Surface Science 2023, October 31st - November 2nd, 2023, Nagoya Congress Center.
【2022年度】
熊谷直哉, 植杉克弘“横方向ゾル-ゲル化反応により形成したGaOOHゲル膜上でのナノシートの自己組織成長” ，日本ゾル-ゲル学会第20回討論会，2022年7月14日～15日，慶応義塾大学．
Katsuhiro Uesugi, Naoya Kumagai, and Yuxiao Pang, “Characterization of GaOOH Films Prepared by Two-dimensional Sol-gel Process”, 22th International Vacuum Congress (IVC-22), September 11-19, 2022, Sapporo Convention Center, Sapporo.
【2021年度】
原田祥五，木村匠之介，森本裕貴，篠崎雄太，植杉克弘“横方向ゾル-ゲル化反応を用いた GaOOH 薄膜の作製”，日本ゾル-ゲル学会第19回討論会，2021年9月13日～14日，Zoomオンライン．
植杉克弘，勝木俊介，篠崎雄太，長内亮太，原田祥五“紫外線照射処理によるゾル‐ゲル成膜Cu2O表面の構造制御”，日本ゾル-ゲル学会第19回討論会，2021年9月13日～14日，Zoomオンライン．
PANG YUXIAO、大山琢未、森田大夢、村木智哉、原田祥五、植杉克弘“ゾル-ゲル成膜Cu2O表面微細構造の自己形成におけるアニーリングの効果”，令和３年度日本表面科学会東北・北海道支部学術講演会，2022年3月3日～4日，Zoomオンライン．
【2020年度】
勝木俊介，篠崎雄太，長内亮太，原田祥五，植杉克弘“スピノーダル分解制御による高密度Cu2Oワイヤー構造の自己形成”，令和2年度日本表面科学会東北・北海道支部学術講演会，2021年3月4日～5日，Zoomオンライン．
木村匠之介，原田祥五，森本裕貴，篠崎雄太，植杉克弘“ゲル化成膜プロセスを用いたGaOOH成長過程の観察”，令和2年度日本表面科学会東北・北海道支部学術講演会，2021年3月4日～5日，Zoomオンライン．
原田祥五，木村匠之介，森本裕貴，篠崎雄太，植杉克弘“熱アニーリングによるゲル化成膜GaOOH薄膜の結晶化過程の評価”，令和2年度日本表面科学会東北・北海道支部学術講演会，2021年3月4日～5日，Zoomオンライン．
【2019年度】
Kanami Matsumoto, Wataru Ikesugi, Yousuke Nakata, Yoshiki Hoshiyama, Kentaro Obara, Hisashi Fukuda, Katsuhiro Uesugi, " Fabrication of High-Aspect-Ratio Cu2O Wire Structures on Surface Through Sol-Gel Process", 10th International Conference on Materials for Advanced Technologies, June 23-28, 2019, Marina Bay Sands, Singapore.
Katsuhiro Uesugi, Kanami Matsumoto, Wataru Ikesugi, Takuma Endo, and Kentaro Obara, "Annealing temperature dependence of structural and optical properties of sol-gel derived copper gallium oxide films", 20th International Sol-Gel Conference, August 25-30, 2019, St Petersburg, Russia.
篠崎雄太，渡辺隼，片倉天斗，原田祥五，松本可菜美，植杉克弘“窒素プラズマを用いたCuN/Cu2Oドット構造の作製”，令和元年度日本表面科学会東北・北海道支部学術講演会，2020年3月4日～5日，弘前大学理工学部，青森．
【2018年度】
Katsuhiro Uesugi and Hisashi Fukuda, “Fabrication of GaSb Mesa Structures by Atomic Layer Etching using Trisdimethylaminoantimony”, 18th Int. Conf. Atomic Layer Deposition and 5th Int. Atomic Layer Etching workshop (ALD/ALE2018), July 29-Aug. 1, 2018, Incheon, Korea.
植杉克弘，金谷優輝，遠藤琢真，池杉海航，小原健太郎，“ゾル-ゲル法により成膜した銅ガリウム酸化物の結晶構造と相転移”，日本ゾル-ゲル学会第16回討論会，平成30年8月6日～7日，関西大学千里山キャンパス，大阪．
Kanami Matsumoto, Wataru Ikesugi, Yousuke Nakata, Yoshiki Hoshiyama, and Katsuhiro Uesugi, "Self-assembled Growth of Cu2O Dot and Wire Structures by Sol-gel Method", 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), October 21-25, 2018, Sendai International Center, Sendai.
Katsuhiro Uesugi, Kanami Matsumoto, Wataru Ikesugi, Yousuke Nakata, Yoshiki Hoshiyama, Kentaro Obara, and Hisashi Fukuda, "Formation of Microwire Arrays with Dot Structure on Sol-gel Derived Cu2O Surfaces by Thermal Annealing", Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018), December 2-6, 2018, Waikoloa Beach Marriott Resort & Spa, Waikoloa Beach, Hawaii.
【2017年度】
Muhammad Hafiz Abu Bakar, Lam Mui Li, Khairul Anuar Mohamad, Fouziah Md Yassin, Chee Fuei Pien, Afishah Alias, Katsuhiro Uesugi, "Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode", Advanced Science Letters, 23(11), 11564-11566 (201711).
Mui Li Lam, Muhammad Hafiz Abu Bakar, Wai Yip Lam, Afishah Alias, Abu Bakar Abd Rahman, Khairul Anuar Mohamad, Katsuhiro Uesugi, "Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method", EPJ Web of Conferences, 162, 01061 (201711).
MH. Abu Bakar, LM. Li, KA. Mohamad, FM. Yassin, CF. Pien, A. Alias, and K. Uesugi, "Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode", Advanced Science Letters, 23(11), 11564-11566 (201711).
MH. Abu Bakar, LM. Li, KA. Mohamad, FM. Yassin, CF. Pien, A. Alias, and K. Uesugi, "Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode", International Conference on Information in Business and Technology Management (12BM), Apr 18-20, 2017, Penang, Malaysia.
Alis Ziana, Kentaro Obara, Yoshihiro Tada, Hisashi Fukuda, and Katsuhiro Uesugi, “Preparation of narrow-bandgap CuGaO2 thin films by sol-gel method”, 9th International Conference on Materials for Advanced Technology ICMAT 2017, June 18-23, 2017, Suntec Singapore, Singapore.
Toru Ozawa, Kotaro Hiraoka, Yosuke Igarashi, Kentaro Obara, and Katsuhiro Uesugi, “Hetero-epitaxial growth process of GaAsNSe thin films using Ga droplets on Si(110)”, 9th International Conference on Materials for Advanced Technology (ICMAT 2017), June 18-23, 2017, Suntec Singapore, Singapore.
池杉海航，小原健太郎，永見耀，松山貴一，遠藤琢真，植杉克弘，“ゾル-ゲル法によるZnドープCuGaO2膜の作製と評価”，日本ゾル-ゲル学会第15回討論会，平成29年8月7日～8日，大阪府立大学I-siteなんば，大阪．
遠藤琢真，小原健太郎，アリス ジアナ，池杉海航，松山貴一，植杉克弘，“ゾル-ゲル法によるCuGaO2膜の結晶構造のアニール温度依存性”，日本ゾル-ゲル学会第15回討論会，平成29年8月7日～8日，大阪府立大学I-siteなんば，大阪．
Mui Li Lam, Muhammad Hafiz Abu Bakar, Wai Yip Lam, Afishah Alias, Abu Bakar Abd Rahman, Khairul Anuar Mohamad and Katsuhiro Uesugi, "Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method", International Conference on Applied Photonics and Electronics 2017 (InCAPE2017), August 9-10, 2017, Avillion Port Dickson, Malaysia.
Kiichi Matsuyama, Kentaro Obara, Alis Ziana, Takuma Endo, Wataru Ikesugi, Taketoshi Aoki, and Katsuhiro Uesugi, “Annealing Time Dependence of Sol-gel Derived CuGaO2 Films”, 15th International Union of Materials Research Societies International Conference on Advanced Materials (IUMRS-ICAM 2017), August 27-September 1, 2017, Kyoto University, Kyoto.
Takuma Endo, Kentaro Obara, Alis Ziana, Wataru Ikesugi, Kiichi Matsuyama, and Katsuhiro Uesugi, “Phase Transition in Sol-gel Derived CuGaO2 Films by Thermal Annealing”, 18th International Union of Materials Research Societies International Conference in Asia (IUMRS-ICA 2017), November 5-9, 2017, Taipei Nangang Exhibition Hall, Taipei, Taiwan.
Toru Ozawa, Yosuke Igarashi, Yuki Shimomura, Shinji Kimura, Kentaro Obara, and Katsuhiro Uesugi, “Surface Diffusion of Ga Droplet on Si(110) in Metal-organic Molecular Beam Epitaxy”, 18th International Union of Materials Research Societies-International Conference in Asia (IUMRS-ICA2017), November 5-9, 2017, Taipei Nangang Exhibition Hall, Taipei, Taiwan.
松本可菜美，池杉海航，植杉克弘，“ゾル-ゲル法によるワイヤー構造を有するCu2Oドットの自己形成”，平成29年度日本表面科学会東北・北海道支部学術講演会，平成30年3月8日～9日，室蘭工業大学，室蘭．
金谷優輝，遠藤琢真，池杉海航，植杉克弘，“ゾル-ゲル法によるスピネル型CuGa2O4薄膜の作製”，平成29年度日本表面科学会東北・北海道支部学術講演会，平成30年3月8日～9日，室蘭工業大学，室蘭．
小澤貫，大谷康之，植杉克弘，“GaAsNSe格子ひずみ緩和層を用いたSi(110)上GaAsのヘテロ成長”，平成29年度日本表面科学会東北・北海道支部学術講演会，平成30年3月8日～9日，室蘭工業大学．
【2016年度】
Yuki Shimomura, Yosuke Igarashi, Shinji Kimura, Yuhei Suzuki, Yoshihiro Tada, Hisashi Fukuda, and Katsuhiro Uesugi, “Metal-organic molecular beam epitaxy of GaAsNSe films using Ga droplets on GaP(001)” Japanese Journal of Applied Physics, 55, 08NB19 (201608).
Yuki Shimomura, Yosuke Igarashi, Toru Ozawa, Shinji Kimura, Kentaro Obara, and Katsuhiro Uesugi, “Effect of Interface Passivation on the Growth of GaAsNSe Layer on Si and GaP substrates by Metal-organic Molecular Beam Epitaxy”, 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), July 10-15, 2016, Sheraton San Diego Hotel & Marina, San Diego, California, USA．
Kentaro Obara, Kazuhiro Demachi, Alis Ziana, Kiichi Matsuyama, Yoshihiro Tada, Hisashi Fukuda, and Katsuhiro Uesugi, “Growth and Characterization of Wurtzite CuGaO2/ZnO Hetero Structures by a Sol-gel Method”, 20th International Vacuum Congress IVC-20, August 21-26, 2016, Busan, Korea.
Toru Ozawa, Yosuke Igarashi, Yuki Shimomura, Shinji Kimura, Kentaro Obara, and Katsuhiro Uesugi, “Growth temperature dependence of GaAsNSe on Si(110) by Metal-organic Molecular Beam Epitaxy using Ga Droplets”, 20th International Vacuum Congress (IVC-20), August 21-26, 2016, Busan, Korea.
Katsuhiro Uesugi, Toru Ozawa, Yosuke Igarashi, Yuki Shimomura, Shinji Kimura, and Kentaro Obara, “Migration-enhanced epitaxy of GaAsNSe thin films on Si(110) substrates”, Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016), December 11-15, 2016, Hapuna Beach Prince Hotel, Hawaii.
植杉克弘，“MOMBE法によるGaAsNSe混晶の成長とその応用”，平成28年度日本表面科学会東北・北海道支部講演会，平成29年3月9日～10日，秋田大学，秋田．
【2015年度】
小川健吾、鳥越俊彦、澤田 研、岩佐達郎、永野宏治、柴山義行、夛田芳広、植杉克弘、福田 永, “液相中への縦波放射を利用したレイリー型表面弾性波センサーの開発”,電気学会論文誌E，Vol.135, No.12,（201512）pp.490-495.
Khairul Anuar Mohamad, Fara Naila Rusnan, Dzulfahmi Mohd Husin Seria, Ismail Saad, Afishah Alias, Uesugi Katsuhiro, Fukuda Hisashi, “Fabrication and characterization of 6, 13-bis (triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method” Physics and Materials Symposium: International Conference on Applied Sciences and Industrial Technology (ICASIT2015), 24-26 February 2015, Negeri Sembilan, Malaysia, AIP Conf. Proc. 1674, 020003 (20150828).
Kentaro Obara, Kazuhiro Demachi, Alis Ziana, and Katsuhiro Uesugi, “Fabrication of CuAlO2/Ga2O3 Thin Film Transistor using Sol-gel Method”,8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (ICMAT 2015 & IUMRS-ICA 2015), June 28–July 3, 2015, Suntec Singapore, Singapore．
Kentaro Obara, Alis Ziana, Kazuhiro Demachi, and Katsuhiro Uesugi, “Annealing Temperature Dependence of Sol-gel Derived Cu-Ga-O Films”, 8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (ICMAT 2015 & IUMRS-ICA 2015), June 28–July 3, 2015, Suntec Singapore, Singapore．
Yuki Shimomura, Yosuke Igarashi, Toru Nakanishi, Shinji Kimura, Yuhei Suzuki, Kentaro Obara, Katsuhiro Uesugi, “Growth of GaAsNSe Film on Gap(001) Using Surface Migration of Ga Droplet”, 8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (ICMAT 2015 & IUMRS-ICA 2015), June 28–July 3, 2015, Suntec Singapore, Singapore．
Yosuke Igarashi, Yuki Shimomura, Toru Nakanishi, Keita Yamashiro, Shinji Kimura, Yuhei Suzuki, Kentaro Obara, Katsuhiro Uesugi, “MOMBE Growth of Se-dope GaAsN Films on Si(110) using Ga Nanodots”, 8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia (ICMAT 2015 & IUMRS-ICA 2015), June 28–July 3, 2015, Suntec Singapore, Singapore．
Shinji Kimura, Yuhei Suzuki, Hiroshi Hashimoto, Yosuke Igarashi, Yuki Shimomura, Katsuhiro Uesugi, “Fabrication of GaAsSb Submicron Dot with Mesa Structure Using Trisdimethylaminoarsenic and Trisdimethylaminoantimony”, ICMAT2015 & IUMRS-ICA2015, 28 June–03 July 2015, Suntec Singapore
Katsuhiro Uesugi, Kentaro Obara, and Hisashi Fukuda, "Characterization of delafossite CuMO2 (M=Al, Ga, In) films prepared by sol-gel method", International Sol-Gel Conference (Sol–Gel 2015), September 6-11, 2015, Mielparque Kyoto, Kyoto.
Y. Igarashi, Y. Shimomura, S. Kimura, K. Obara, and K. Uesugi, “Low Temperature Growth of GaAsNSe Films on Si(110) Substrates by RF-MOMBE with Ga Migration”, 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015), October 4-7, 2015, IBEROSTAR Paraíso Beach Hotel, Mayan Riviera, Mexico.
Alis Ziana Binti Zaba，小原健太郎，出町和博，夛田芳広，福田永，植杉克弘, “ゾル-ゲル法による銅ガリウム酸化物半導体薄膜の作製と構造制御”，日本ゾル-ゲル学会第13回討論会，2015年11月19日-20日，北海道大学，札幌．
Y. Shimomura, Y. Igarashi, S. Kimura, Y. Suzuki, and K. Uesugi, “Metal-organic Molecular Beam Epitaxy of GaAsNSe Films using Ga Droplets on GaP(001)”, 23rd International Colloquium on Scanning Probe Microscopy(ICSPM23), December 10-12, 2015, Hilton Niseko Village, Japan.
Alis Ziana Binti Zaba, Kentaro Obara, Kazuhiro Demachi, Kiichi Matsuyama, and Katsuhiro Uesugi, “Controlling the crystal structure and optical property of CuGaO2 films prepared by sol-gel method” 2nd Annual World Congress of Smart Materials-2016, March 4-6, 2016, Grand Copthorne Waterfront Hotel, Singapore.
Katsuhiro Uesugi, Yosuke Igarashi, Yuki Shimomura, Shinji Kimura, and Kentaro Obara, “Growth of GaAsNSe Films on Silicon and GaP Substrates for Silicon Photonics”, 2nd Annual World Congress of Smart Materials-2016, March 4-6, 2016, Grand Copthorne Waterfront Hotel, Singapore.
小原健太郎，Alis Ziana Binti Zaba，出町和博，松山貴一，夛田芳広，福田永，植杉克弘，“ゾル-ゲル法によるp-CuGaO2/n-ZnOヘテロ接合の作製”，平成27年度日本表面科学会東北・北海道支部講演会，平成28年3月9日～10日，東北大学多元物質科学研究所，仙台．
五十嵐洋輔，下村優樹，木村慎治，小澤貫，佐藤建甫，小原健太郎，植杉克弘，“Ga表面拡散を用いたMOMBEによるGaAsNSe薄膜の成長過程の評価”，平成27年度日本表面科学会東北・北海道支部講演会，平成28年3月9日～10日，東北大学多元物質科学研究所，仙台．
【2014年度】
Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Kumar Gosh, Katsuhiro Uesugi, Hisashi Fukuda, “Mixed P3HT/PCBM Organic Thin-Film Transistors: Relation between Morphology and Electrical Characteristics”, J. Chem. Chem. Eng.(Journal of Chemistry and Chemical Engineering) 8(5) (201405) 476-481.
小川健吾、山田真也、鳥越俊彦、澤田 研、岩佐達郎、杉山史一、夛田芳広、植杉克弘、福田 永, “縦波表面弾性波を用いた液相系センサーの動作特性”, 表面科学,35(6) (201406) 319-323.
Sinji Kimura, Yuhei Suzuki, Kohei Miyazawa, Yuki Shimomura, Yosuke Igarashi, and Katsuhiro Uesugi, “Arsenic incorporation in GaAsSb submicron dots on GaAs substrates grown by metal-organic molecular beam epitaxy”, International Conference on Electronic Materials 2014, June 10-14 2014, TWTC Nangang Exhibition Hall, Taipei, Taiwan.
Yuhei Suzuki, Shinji Kimura, Kohei Miyazawa, and Katsuhiro Uesugi,“Effect of nitrogen-radical irradiation for selective growth of InAs on GaAsSb/GaAs submicron dot structures”, IUMRS International Conference on Electronic Materials 2014, June 10-14 2014, TWTC Nangang Exhibition Hall, Taipei, Taiwan.
小原健太郎，出町和博，Alis Ziana Binti Zaba，北島芳朗，夛田芳広，福田永，植杉克弘，「ゾル-ゲル法によるCuAlO2/Ga2O3薄膜トランジスタの作製」，日本ゾル-ゲル学会第12回討論会，平成26年8月7日～8日，つくば国際会議場，茨城．
Katsuhiro Uesugi, Yosuke Suzuki, Kentaro Obara, Teppei Kimura, Yuhei Suzuki, Yoshihiro Tada, and Hisashi Fukuda, “Effect of anneal heating rate on phase and morphology of copper indium oxide films prepared by sol-gel method”, 8th International Workshop on Zinc Oxide and Related Materials (IWZnO 2014), September 7-11, 2014, Sheraton on the Falls Hotel, Niagara Falls, Ontario, Canada.
夛田 芳広、中山 誠、植杉 克弘、福田 永「CYTOP薄膜の誘電特性とメモリデバイスへの応用」，第75回応用物理学会秋季学術講演会，2014年9月17～20日，北海道大学，札幌．
出町和博，Ziana Alis，小原健太郎，植杉克弘「ゾル・ゲル法を用いたワイドバンドギャップCuAlO薄膜の作製」，第34回表面科学学術講演会，平成26年11月6日〜8日，島根県立産業交流会館（くにびきメッセ），島根．
木村慎治，鈴木悠平，宮澤康平，下村優樹，五十嵐洋輔，植杉克弘「MOMBE法によるGaAsSbサブミクロンドットの自己形成過程の評価」，第34回表面科学学術講演会，平成26年11月6日〜8日，島根県立産業交流会館（くにびきメッセ）．
鈴木悠平，木村慎治，宮澤康平，下村優樹，五十嵐洋輔，植杉克弘「GaAsSb/GaAsドット表面への窒素ラジカル照射の効果」，第34回表面科学学術講演会，平成26年11月6日〜8日，島根県立産業交流会館（くにびきメッセ）．
下村優樹，五十嵐洋輔，木村慎治，鈴木悠平，宮澤康平，小原健太郎，植杉克弘「有機金属分子線エピタキシー法によるGaP（001）上GaAsN系混晶の成長」，第34回表面科学学術講演会，平成26年11月6日〜8日，島根県立産業交流会館（くにびきメッセ）．
五十嵐洋輔，下村優樹，木村慎治，鈴木悠平，宮澤康平，小原健太郎，植杉克弘「有機金属分子線エピタキシー法を用いたGaAsN/Si(110)成長過程の評価」，第34回表面科学学術講演会，平成26年11月6日〜8日，島根県立産業交流会館（くにびきメッセ）．
Masataka Sato, Kentaro Obara, Yuhei Suzuki, Kohei Miyazawa, and Katsuhiro Uesugi, “Initial growth process of GaAsSe layers on Si(110) substrates by metal-organic molecular beam epitaxy”, Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014), December 7-11, 2014, Hapuna Beach Prince Hotel, Hawaii.
Khairul Anuar Mohamad, Fara Naila Rusnan, Dzulfahmi Mohd Husin Seria, Ismail Saad, Afishah Alias, Uesugi Katsuhiro, Fukuda Hisashi, “Fabrication and characterization of 6, 13-bis (triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method” International Conference on Applied Sciences and Industrial Technology (ICASIT2015), 24-26 February 2015, Negeri Sembilan, Malaysia.
木村慎治、鈴木悠平、橋本広志、植杉克弘，「TDMASbおよびTDMAAsを用いたGaAsSbサブミクロンドットのメサ構造の作製」，平成26年度日本表面科学会東北・北海道支部講演会，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
下村優樹、五十嵐洋輔、木村慎治、鈴木悠平、小原健太郎、植杉克弘，「Ga表面マイグレーションを利用したGaP上GaAsNSe混晶の成長過程の評価」，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
五十嵐洋輔、下村優樹、中西徹、山城啓太、木村慎治、鈴木悠平、小原健太郎、植杉克弘，「Gaドットを用いたSi(110)上へのGaAsNSeヘテロ成長過程の評価」，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
山城啓太、鈴木悠平、下村優樹、五十嵐洋輔、木村慎治、植杉克弘，「液滴エピタキシーによるSi上へのGaAsSeドットの作製」，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
小原健太郎，出町和博，Alis Ziana Binti Zaba，夛田芳広，福田永，植杉克弘，「ゾル-ゲル成膜したCuAlO2/Ga2O3を用いたTFTの作製と評価」，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
出町和博，小原健太郎，Alis Ziana Binti Zaba，夛田芳広，福田永，植杉克弘，「ゾル・ゲル法によるアモルファスCuAlO薄膜の作製」，平成26年度日本表面科学会東北・北海道支部講演会，平成27年3月9日～10日，北海道大学百年記念会館，札幌．
Alis Ziana Binti Zaba, Kentaro Obara, Demachi Kazuhiro, Yoshihiro Tada, Hisashi Fukuda, and Katsuhiro Uesugi, “Fabrication of narrow gap CuGaO film by using sol-gel method”，平成26年度日本表面科学会東北・北海道支部講演会，27年3月9日～10日，北海道大学百年記念会館，札幌．
【2013年度】
Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Gosh, Katsuhiro Uesugi, Hiroshi Fukuda, “Effect of [6, 6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors”, 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), no.6706502(20130925), 179-182.
Afishah Alias, Khairul Anuar Mohamad, K Uesugi, Hiroshi Fukuda, “Electrical and structural characterization of Zn doped CuGaO2 films”, 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), (20130925) 183-185.
Alias, A., Mohamad, K.A., Uesugi, K., Fukuda, H., “Electrical and structural characterization of Zn doped CuGaO2 films”, (2013) Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics, art. no. 6706503, pp. 183-185.
Teppei Kimura, Yosuke Suzuki, Kentaro Obara, and Katsuhiro Uesugi, “Growth of Cu-dope Ga2O3 Films on CuO Buffer Layers by Sol-gel Method” 7th International Conference on Materials for Advanced Technologies, June 30-July 5, 2013, Suntec Singapore, Singapore.
Yosuke Suzuki, Kentaro Obara, Teppei Kimura, and Katsuhiro Uesugi, “Preparation and Characterization of Copper-indium Oxide Films by Sol-gel Method” 7th International Conference on Materials for Advanced Technologies, June 30-July 5, 2013, Suntec Singapore, Singapore.
小原健太郎，木村鉄兵，福田永，植杉克弘，「ゾル-ゲル法によるデラフォサイト型Cu系透明酸化物半導体薄膜の作製」，日本ゾル-ゲル学会第11回討論会，平成25年8月1日～2日，広島大学サタケメモリアルホール，東広島．
Yosuke Suzuki, Kentaro Obara, Teppei Kimura, and Katsuhiro Uesugi, “Effect of Cu-In Mole Ratio on Phase Constituent of Sol-gel Derived Copper Indium Oxide Films”, International Conference on Advanced Materials, September 22-28 2013, Qingdao, China.
Afishah Alias, Khairul Anuar Mohamad, Katsuhiro Uesugi, and Hisashi Fukuda, “Electrical and Structural Characterization of Zn Doped CuGaO2 Films”, 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM2013), September 25-27 2013, Holiday Villa Beach Resort & Spa, Langkawi, Malaysia.
Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Gosh, Katsuhiro Uesugi, and Hisashi Fukuda, “Effect of [6,6]-Phenyl-C61 Butyric Acid Methyl Ester (PCBM) Agglomerated Nanostructure on Device Performance in Organic Thin-Film Transistors”, 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM2013), September 25-27 2013, Holiday Villa Beach Resort & Spa, Langkawi, Malaysia.
Yuhei Suzuki, Shinji Kimura, and Katsuhiro Uesugi, “Characterization of InAs/GaAsSb quantum dot structures self-assembly grown on GaAs (001) substrate by metal-organic molecular beam epitaxy”, 9th International Symposium on Atomic Level Characterizations for New Materials and Devices, December 2-6 2013, Sheraton Kona, The Big Island, Hawaii, USA.
鈴木悠平，木村慎治，宮澤康平，下村優樹，五十嵐洋輔，植杉克弘「MOMBE法を用いた自己形成GaAsSbサブミクロンドット上のInAs選択成長」，平成25年度日本表面科学会東北・北海道支部講演会，平成26年3月10日〜11日，東北大学片平北門会館．
【2012年度】
Alias, A., Sakamoto, M., Kimura, T., Uesugi, K., “Temperature dependence of CuGaO2 films fabricated by sol-gel method”, Japanese Journal of Applied Physics, 51(3) (2012), 035503.
Alias, A., Sakamoto, M., Kimura, T., Uesugi, K., “Characterization of CuGaO2 films prepared by sol-gel methods”, Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (2) (2012) pp. 198-201.
Mohamad, K.A., Alias, A., Saad, I., Uesugi, K., Fukuda, H., “Organic field-effect transistors with reversible threshold voltage shifts for memory element”, International Journal of Simulation: Systems, Science and Technology, 13 (3 C), (2012) pp. 42-47.
Alias, A., Sakamoto, M., Uesugi, K., “Growth of CuO and CuGaO2 thin films by spin-coating method”, (2012) Materials Research Society Symposium Proceedings, 1315, pp. 35-38.
Mohamad, K.A., Alias, A., Saad, I., Gosh, B.K., Uesugi, K., Fukuda, H., “Organic field-effect transistors for nonvolatile memory devices using charge-acceptor layers”, (2012) 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings, art. no. 6417252, pp. 750-754.
Mohamad, K.A., Alias, A., Saad, I., Uesugi, K., Fukuda, H., “All-polymer organic field-effect transistors with memory element”, (2012) Proceedings - 3rd International Conference on Intelligent Systems Modelling and Simulation, ISMS 2012, art. no. 6169797, pp. 743-746.
Alias, A., Mohamad, K.A., Gosh, B.K., Sakamoto, M., Uesugi, K., “Fabrication of CuGaO2 films by sol-gel method for UV detector application”, (2012) 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings, art. no. 6417255, pp. 763-765.
Kentaro Obara, Teppei Kimura, Hisashi Fukuda, and Katsuhiro Uesugi, “Characterization of delafossite-CuAlO2 thin films prepared by sol-gel method”, IUMRS-ICA 2012, August 26-31 2012, BEXCO, Busan, Korea.
Takanari Yumi, Kohei Miyazawa, Masataka Sato, and Katsuhiro Uesugi, “Growth of self-organized GaAsSb submicron dots on GaAs by metal-organic molecular beam epitaxy”, IUMRS-ICA 2012, August 26-31 2012, BEXCO, Busan, Korea.
小川健吾，阿部敏広，清野芳紀，鳥越俊彦，植杉克弘，福田永，澤田研，岩佐達郎「表面弾性波バイオセンサーを使用した液相中のグルタチオンとグルタチオン S-トランスフェラーゼ反応の高感度分析」応物2012秋13p-PB1-2．
Afishah Alias, Khairul Anuar Mohamad, Bablu Kumar Gosh, Masato Sakamoto, Katsuhiro Uesugi, Kota Kinabalu, “Fabrication of CuGaO2 Films by Sol-gel Method for UV Detector Application”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE2012), 19-21 September 2012, 763-765, Kuala Lumpur, Malaysia.
Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Bablu Kumar Gosh, Katsuhiro Uesugi, Hisashi Fukuda, “Organic Field-Effect Transistors for Nonvolatile Memory Devices using Charge-Acceptor Layers”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE2012), 19-21 September 2012, 750-754, Kuala Lumpur, Malaysia.
Kentaro Obara, Yosuke Suzuki, Teppei Kimura, Yusuke Tsuchiya, and Katsuhiro Uesugi, “Fabrication of Zn-doped CuAlO2 films prepared by spin-coating” Materials Research Society Fall Meeting, November 25-30 2012, Hynes Convention Center, Boston, USA.
Katsuhiro Uesugi, Masataka Sato, Kohei Miyazawa, Takanari Yumi and Hisashi Fukuda, “Hetero-epitaxial growth process of type-II GaSb/GaAs quantum dot system by metal-organic molecular beam epitaxy”, Materials Research Society Fall Meeting, November 25-30 2012, Hynes Convention Center, Boston, USA.
鈴木陽介，小原健太郎，木村鉄兵，福田永，植杉克弘，「ゾル・ゲル法を用いたCuInO2薄膜の作製と評価」，平成24年度日本表面科学会東北・北海道支部学術講演会，平成25年3月11日～12日，日本大学工学部50周年記念館（ハットNE），福島
【2011年度】
Khairul Anuar Mohamad, Kakuta Yousuke, Katsuhiro Uesugi, Hisashi Fukuda, “n-Channel Organic Thin-Film Transistors based on Naphthalene-Bis (dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer”, Japanese Journal of Applied Physics, 50 (20110901) 091603.
Khairul Anuar Mohamad, Ismail Saad, Katsuhiro Uesugi, Hisashi Fukuda, “Optical responses and optically program-electrically erase memory in organic transistors”, 2011 IEEE 2nd International Conference on Photonics (ICP2011),17-19 October 2011, 60-63.
Katsuhiro Uesugi, Tsuyoshi Usui, Takanari Yumi and Afishah Alias, “Fabrication of GaSb submicron islands on GaAs using trisdimethylaminoantimony”, International Conference on Materials for Advanced Technology (ICMAT 2011)”, June 26-Jily 1 2011, Suntec Singapore and the Pan Pacific Singapore Hotel, Singapore.
Afishah Alias, Nobuaki Kawashima, and Katsuhiro Uesugi, “Mol Concentration Dependence of ZnO TFTs Fabricate by CVD Method using ZnAc2 Solution”, International Conference on Materials for Advanced Technology ICMAT2011”,June 26-July 1 2011, Suntec Singapore and the Pan Pacific Singapore Hotel, Singapore.
Afishah Alias, Masato Sakamoto, Teppei Kimura, Katsuhiro Uesugi, “Effect of Cu Doping on Ga2O3 Films by Sol-gel Method”, International Conference on Materials for Advanced Technology ICMAT2011”,June 26-July 1 2011, Suntec Singapore and the Pan Pacific Singapore Hotel, Singapore.
Afishah Alias, Masato Sakamoto, and Katsuhiro Uesugi, “Fabrication of CuGaO2 on Si Substrate Using Sol-gel Method”, International Conference on Materials for Advanced Technology ICMAT2011”, June 26-July 1 2011, Suntec Singapore and the Pan Pacific Singapore Hotel, Singapore.
Afishah Alias, Masato Sakamoto and Katsuhiro Uesugi, “Fabrication of P-type Transparent CuZnGaO2 films by Sol-gel Method”,12th International Conference in Asia (IUMRS-ICA2011), 19-22 September, 2011, TWTC Nangang, Taipei.
Katsuhiro Uesugi, Takanari Yumi, Tsuyoshi Usui, and Afishah Alias, “Selective Growth of GaSb Quantum Dots on GaAs Nano-ring Structures by Metalorganic Molecular Beam Epitaxy”,12th International Conference in Asia (IUMRS-ICA2011), 19-22 September, 2011, TWTC Nangang, Taipei.
Khairul Anuar Mohamad, Ismail Saad, Katsuhiro Uesugi, Hisashi Fukuda, “Optical responses and optically program-electrically erase memory in organic transistors”, 2011 IEEE 2nd International Conference on Photonics (ICP2011),17-19 October 2011, 1-4.
Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Katsuhiro Uesugi, Hisashi Fukuda, “All-Polymer Organic Field-Effect Transistors with Memory Element”, 2012 Third International Conference on Intelligent Systems, Modelling and Simulation (ISMS), 2012/2/8, 743-746.
木村鉄平，福田永，植杉克弘，「スピンコート法によるCu添加Ga2O3薄膜の作製」，平成23年度日本表面科学会東北・北海道支部学術講演会，平成２４年３月８日～９日，東北大学多元物質科学研究所，仙台.
小原健太郎，木村鉄平，福田永，植杉克弘，「スピンコート法による高配向CuAlO2薄膜の作製」，平成23年度日本表面科学会東北・北海道支部学術講演会，平成24年3月8日～9日，東北大学多元物質科学研究所，仙台.
【2010年度】
Yoshihiro Tada, Khairul A Mohamad, Katsuhiro Uesugi, Hisashi Fukuda, “Organic Thin-Film Transistor Memory with Nanocrystal Carbon Dots”, e-Journal of Surface Science and Nanotechnology 8 (2010) 250-253.
Khairul Anuar Mohamad, Natsuki Komatsu, Katsuhiro Uesugi, Hisashi Fukuda, “Molecular orientation of poly (3-hexylthiophene)/fullerene composite thin films”, Japanese Journal of Applied Physics, 49 (20100401) 04DK25.
Khairul Anuar Mohamad, Keisuke Goto, Katsuhiro Uesugi, Hisashi Fukuda, “Poly (3-hexylthiophene)/Fullerene Organic Thin-Film Transistors: Investigation of Photoresponse and Memory Effects”, Japanese Journal of Applied Physics, 49 (20100601) 06GG09.
Alias, A., Hazawa, K., Kawashima, N., Fukuda, H., Uesugi, K., “Fabrication of zno thin-film transistors by chemical vapor deposition method”, Japanese Journal of Applied Physics, 50 (1 PART 3), (2011) 01BG05.
Khairul Anuar Mohamad, Katsuhiro Uesugi, Hisashi Fukuda, “Bias-Induced Threshold Voltage Shifts in Organic Thin-Film Transistors by Soluble Fullerene Layers on Gate Dielectric”, Japanese Journal of Applied Physics, 50 (20110101) 01BC04.
Katsuhiro Uesugi, Tsuyoshi Usui, Afishah Alias, “Self-limiting growth of submicron-sized GaSb dots on GaAs(001) surface by metalorganic molecularbeam epitaxy”, International Conference on Crystal Growth(ICCG-16) & International Conference on Vapor Growth and Epitaxy(ICVGE-14), August 8-13, 2010, Beijing, China.
Afishah Alias, Kouta Hazawa, Nobuaki Kawashima, Hisashi Fukuda, and Katsuhiro Uesugi, “Growth Temperature Dependence of ZnO Films using Zinc Acetate Solution by CVD Method”, International Conference on Crystal Growth(ICCG-16) & International Conference on Vapor Growth and Epitaxy(ICVGE-14), August 8-13, 2010, Beijing, China.
坂本正人，木村鉄平，Alias Afishah，植杉克弘, “ゾル・ゲル法を用いたCuGaO2薄膜の作製”, 第30回表面科学学術講演会第51回真空に関する連合講演会, 2010年11月4日（木）－11月6日（土）, 大阪大学吹田キャンパス コンベンションセンター.
Masato Sakamoto, Afishah Alias and Katsuhiro Uesugi, “Growth of CuO and CuGaO2 thin films by spin-coating method”, 2010 MRS Fall Meeting & Exhibit, November 29-December 3, 2010, Boston, Massachusetts.
臼井強志，弓 貴成，植杉克弘, “MOMBE法によるサブミクロンサイズのGaSbメサ構造の作製”, 第46回応用物理学会北海道支部7回日本光学会北海道地区合同学術講演会, 平成23年1月7日（金）, 8日（土）, 室蘭工業大学.
坂本正人，木村鉄兵，アフィシャ アリアス，植杉克弘, “ゾル・ゲル法によるCuGaO2薄膜の作製”, 第46回応用物理学会北海道支部7回日本光学会北海道地区合同学術講演会, 平成23年1月7日（金）, 8日（土）, 室蘭工業大学.
川嶋伸明、アフィシャ アリアス、中村允哉、須藤裕也、植杉克弘, “酢酸亜鉛を用いたCVD法による ZnOの成長”, 平成２２年度日本表面科学会東北・北海道支部講演会, 平成２３年３月９日（水）-１０日（木）, 東北大学 多元物質科学研究所.
【2009年度】
Khairul A Mohamad, Yoshihiro Tada, Takefumi Miura, Katsuhiro Uesugi, Hisashi Fukuda, “Carbon Nanocrystal-Based Organic Thin-Film Transistors for Nonvolatile Memory Nanodevices”, e-Journal of Surface Science and Nanotechnology 7 (2009) 665-668.
Khairul Anuar Mohamad, Shinya Yamada, Katsuhiro Uesugi, Hisashi Fukuda, “Bias Stress and Memory Effect in Pentacene-based Organic Thin-Film Transistors with a Fullerene Layer”, e-Journal of Surface Science and Nanotechnology 7 (2009) 808-812.
羽澤宏太，川嶋伸明，坂本正人，アフィシャ アリアス，植杉克弘, “酢酸亜鉛を用いたCVD法によるZnOの成膜とそのTFT応用”, 第４５回 応用物理学会北海道支部第６回 日本光学会北海道地区合同学術講演会, 平成２２年１月８日（金），１月９日（土）, 北海道大学 学術交流会館.
臼井強志、竹中浩人、松本和希、三浦淳士、植杉克弘, “MOMBE 法によるサブミクロンサイズの自己組織化GaSbドットの作製”, 日本表面科学会東北・北海道支部講演会, 2010 年3 月10 日 (水), 11 日 (木), 東北大学 多元物質科学研究所.
【2008年度】
I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, and E. Hanamura: “Role of Cooper paires for the generation of entangled photon pairs from single quantum dots”Microelectronics Journal 39, 344-347 (2008).
福田永，植杉克弘，”ポリ３ヘキシルチオフェン薄膜形成と有機トランジスタへの応用”，電子情報通信学会研究会電子部品・材料研究会（CPM），2008年8月4日，室蘭工大．
夛田芳広，山田真也，植杉克弘，福田 永，”ペンタセン薄膜形成と有機トランジスタへの応用”，電子情報通信学会研究会電子部品・材料研究会（CPM），2008年8月4日，室蘭工大．
【2007年度】
R.A. Rahim, H. Kurahashi, K. Uesugi, and H. Fukuda: “Carbon nano dots scale by focused ion beam system for MIS diode nano devices” Surface Science 601, 5112-5115 (2007).
I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, and E. Hanamura: “Role of entangled photon pairs from single quantum dots”6th International Conference on low Dimensional Structures and Devices (LDSD2007), April 15-20, 2007, San Andres, Mexico.
K. Uesugi, M. Sato, Y. Idutsu and I. Suemune, "GROWTH PROCESS OF GaAs CAP LAYERS ON GaSb/GaAs QUANTUM DOT SURFACES", 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 14-18 May 2007, Matsue.
Y. Idutsu, Y. Hayashi, M. Endo, K. Uesugi, and I. Suemune: “Surface passivation effect of electron-beam resist on InAs quantum dots and their improve luminescence efficiency” 2007 International Conference on Indium Phosphide and Related Materials (19th IPRM), May 14-18, 2007, Matsue.
H. Fukuda, R.A. Rahim, Y. Tada, N. Wainai, K. Uesugi, and Y. Shimoyama: “Organic Thin Film Transistor Memories with Carbon Nanodots Fabricated by Focused ion Beam Chemical Vapor Deposition”Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO), June 19-22, 2007, Nagano.
J. Ibanez, E. Alarcon-Liado, R. Cusco, L. Artus, D. Fowler, A. Patane, K. Uesugi, and I. Suemune: “Lo Phonon-Plasmon Coupled Modes and Carrier Mobilities in Heavily Se-doped Ga(As,N) Thin Films”International Conference on Optical, Optoelectronics and Photonic Materials and Applications (ICOOPMA 2007), July 30- August 3, 2007, London.
Katsuhiro Uesugi and Hisashi Fukuda, "MODIFICATION OF GaSb/GaAs QUANTUM DOTS USING TRISDIMETHYLAMINOANTIMONY", 2007 MRS Fall Meeting & Exhibit, November 26-30, Boston.
植杉克弘，”TDMASbを用いた GaSb量子ドットの形状制御”，日本表面科学会東北・北海道支部講演会, 2008年3月13,14日, 東北大学片平キャンパス．
江尻剛士，柏田沙織，石崎翼，小西敬太，植杉克弘，陽完治, “分子線エピタキシーによるInAsナノワイヤのVLS成長”, 第55回応用物理学関係連合講演会，2008年3月27日-30日，日本大学理工学部船橋キャンパス．
【2006年度】
Ikuo SUEMUNE, Ganapathy SASIKALA, Hidekazu KUMANO, Katsuhiro UESUGI,
Yoichi NABETANI, Takashi MATSUMOTO, J.-T. MAENG and Tae Yeon SEONG, "Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths", Jpn. J. Appl. Phys., Vol. 45, No. 21 (2006) L529–L532.
Yoichi NABETANI, Takashi MATSUMOTO, J.-T. MAENG and Tae Yeon SEONG, "Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths", Jpn. J. Appl. Phys., Vol. 45, No. 21 (2006) L529–L532.
Ikuo SUEMUNE, Tatsushi AKAZAKI, Kazunori TANAKA, Masafumi JO, Katsuhiro UESUGI, Michiaki ENDO, Hidekazu KUMANO, Eiichi HANAMURA, Hideaki TAKAYANAGI, Masamichi YAMANISHI and Hirofumi KAN, "Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs", Jpn. J. Appl. Phys., Vol. 45, No. 12 (2006) 9264–9271.
W. Zhang, K. Uesugi, and I. Suemune: "The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots" J. Appl. Phys. 99(10), 103103-1-7 (2006).
W. Zhou, K. Uesugi, and I. Suemune: “Infuluence of Strain Modulations in Capping Layers of InAs Quantum Dots with Compressive-inGaAs and Tensile-GaAsN Layer Struntures” TMS 2006 Electronic Materials Conferencs, June 28-30, 2006, Pennsylvania State university, USA.
植杉克弘，福田 永，井筒康洋，末宗幾夫，”GaSb 量子ドット表面上の GaAs 埋め込み層成長過程の評価”，2006年秋季 第67回応用物理学会学術講演会，2006年8月29日ー9月1日，立命館大．
R.A. Rahim, H. Kurahashi, K. Uesugi, and H. Fukuda: “Semiconductor nano-structure and their applications to next generation nano devices” 10th ISSP International Symposium on Nanoscience at Surface, October 9-13, 2006, Chiba.